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PD - 94076
IRG4BC20W-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications * Industry-benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability
C
VCES = 600V
G E
VCE(on) typ. = 2.16V
@VGE = 15V, IC = 6.5A
N-channel
Benefits
* Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz ("hard switched" mode) * Of particular benefit to single-ended converters and boost PFC topologies 150W and higher * Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300kHz) D2Pak
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
600 13 6.5 52 52 20 200 60 24 -55 to + 150 300 (0.063 in. (1.6mm) from case )
Units
V A
V mJ W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight
Typ.
--- 0.5 --- 1.44
Max.
2.1 --- 40 ---
Units
C/W g (oz)
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5/24/00
IRG4BC20W-S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(ON) VGE(th) VGE(th)/TJ gfe ICES
IGES
Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.48 -- V/C VGE = 0V, IC = 1.0mA -- 2.16 2.6 IC = 6.5A VGE = 15V Collector-to-Emitter Saturation Voltage -- 2.55 -- IC = 13A See Fig.2, 5 V -- 2.05 -- IC = 6.5A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -8.8 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 5.5 8.3 -- S VCE = 100 V, IC = 6.5A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 26 38 IC = 6.5A 3.7 5.5 nC VCC = 400V See Fig.8 10 15 VGE = 15V 22 -- 14 -- TJ = 25C ns 110 160 IC = 6.5A, VCC = 480V 64 96 VGE = 15V, RG = 50 0.06 -- Energy losses include "tail" 0.08 -- mJ See Fig. 9, 10, 14 0.14 0.2 21 -- TJ = 150C, 15 -- IC = 6.5A, VCC = 480V ns 150 -- VGE = 15V, RG = 50 150 -- Energy losses include "tail" 0.34 -- mJ See Fig. 10, 11, 14 7.5 -- nH Measured 5mm from package 490 -- VGE = 0V 38 -- pF VCC = 30V See Fig. 7 8.8 -- = 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. (See Fig. 13b)
Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 50,
(See Fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
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IRG4BC20W-S
25 F o r b o th :
T ria n g u la r w a ve :
20
D uty c yc le: 50% TJ = 125 C Ts ink = 90C G ate drive as spec ified
P o w e r D is s ip a tio n = 1 3 W C la m p vo l ta g e : 8 0 % o f ra te d
Load Current ( A )
15 S q u a re wave : 6 0 % o f ra te d v o lta g e 10
5 Id e al d io de s
0 0.1 1 10 100
A
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
T = 150 C J
10
10
TJ = 150 C
TJ = 25 C V GE = 15V 20s PULSE WIDTH
1 10
TJ = 25 C V CC = 50V 5s PULSE WIDTH
5 6 7 9 10 11
1
1
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4BC20W-S
14 3.0
Maximum DC Collector Current(A)
12
10
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH
I C = 13 A
8
I C = 6.5 A
2.0
6
I C =3.25 A
4
2
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
1
D = 0.50 0.20 0.10 0.05 P DM t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t2
0.1
0.02 0.01
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG4BC20W-S
1000
800
VGE , Gate-to-Emitter Voltage (V)
100
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 6.5A
16
C, Capacitance (pF)
600
Cies
12
400
8
200
Coes Cres
4
0 1 10
0 0 5 10 15 20 25 30
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.15
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C I C = 6.5A
10
50 RG = Ohm VGE = 15V VCC = 480V
0.14
1
IC = 13 A IC = 6.5 A
0.13
0.1
IC = 3.25 A
0.12 0 10 20 30 40 50
0.01 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG, Gate Resistance ()
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4BC20W-S
0.8
0.6
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ VCC VGE
= 50 Ohm = 150 C = 480V = 15V
100
VGE = 20V T J = 125 oC
0.4
10
0.2
SAFE OPERATING AREA
0.0 0 2 4 6 8 10 12 14 1 1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
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IRG4BC20W-S
L 50V 1 00 0V VC *
0 - 480V
D .U .T.
RL = 480V 4 X I C@25C
480F 960V
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V
* Driver same type as D.U.T., VC = 480V
D .U .T. VC
Fig. 14a - Switching Loss
Test Circuit
90 %
10 % 90 %
VC
t d (o ff)
Fig. 14b - Switching Loss
Waveforms
1 0% IC 5% t d (o n )
tr Eon E ts = (E o n +E o ff )
tf t=5 s E o ff
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IRG4BC20W-S
D2Pak Package Outline
1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2
4 .6 9 (.18 5) 4 .2 0 (.16 5)
-B1.3 2 (.05 2) 1.2 2 (.04 8)
10 .1 6 (.4 00 ) R E F.
6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)
0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM
0.55 (.0 22) 0.46 (.0 18)
M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E
8 .89 (.35 0) 17 .78 (.70 0)
3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X
D2Pak Part Marking Information
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
8
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IRG4BC20W-S
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 )
F EE D D IR E C T IO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )
1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )
2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )
TRL
1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F E E D D IR E C T IO N
1 3.5 0 (.5 32 ) 1 2.8 0 (.5 04 )
2 7 .4 0 (1 .0 79 ) 2 3 .9 0 (.9 4 1)
4
3 3 0 .0 0 (1 4 .1 7 3) M A X.
6 0 .0 0 (2 .3 6 2) M IN .
N OT ES : 1. C O M F O R M S T O E IA -4 1 8 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
2 6 .4 0 (1 .0 3 9 ) 2 4 .4 0 (.9 6 1 ) 3
3 0 .4 0 (1 .1 97 ) M AX . 4
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/01
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